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1 Ergebnisse
1
Study on the Impact of Parasitic Parameters on the Switchin..:
, In:
2023 5th International Academic Exchange Conference on Science and Technology Innovation (IAECST)
,
Chen, Chun
;
Ni, Yajia
;
Zhou, Huahao
... - p. 1425-1431 , 2023
Link:
https://doi.org/10.1109/IAECST60924.2023.10502470
RT T1 <cTitle>2023 5th International Academic Exchange Conference on Science and Technology Innovation (IAECST)</cTitle>: T1 <Title>Study on the Impact of Parasitic Parameters on the Switching Characteristics of Silicon Carbide MOSFET Devices for High-Voltage Charging Stations</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10502470&Exemplar=1&LAN=DE A1 Chen, Chun A1 Ni, Yajia A1 Zhou, Huahao A1 Zhuang, Jiandong A1 Wu, Haifu A1 Liu, Tianyu A1 Xu, Wuhao YR 2023 K1 Semiconductor device modeling K1 MOSFET K1 Analytical models K1 Silicon carbide K1 Switches K1 Threshold voltage K1 Steady-state K1 SiC MOSFET K1 characteristic parameters K1 differences K1 parallel connection K1 static and dynamic current sharing K1 switching characteristics SP 1425 OP 1431 LK http://dx.doi.org/https://doi.org/10.1109/IAECST60924.2023.10502470 DO https://doi.org/10.1109/IAECST60924.2023.10502470 SF ELIB - SuUB Bremen
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