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1 Ergebnisse
1
SiC engineered substrate: increasing SiC MOSFETs current de..:
, In:
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
,
Guiot, Eric
;
Allibert, Frederic
;
Leib, Jurgen
... - p. 210-214 , 2024
Link:
https://doi.org/10.1109/APEC48139.2024.10509052
RT T1 <cTitle>2024 IEEE Applied Power Electronics Conference and Exposition (APEC)</cTitle>: T1 <Title>SiC engineered substrate: increasing SiC MOSFETs current density from device to module level</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10509052&Exemplar=1&LAN=DE A1 Guiot, Eric A1 Allibert, Frederic A1 Leib, Jurgen A1 Becker, Tom A1 Drouin, Alexis A1 Schwarzenbach, Walter YR 2024 SN 2470-6647 K1 Silver K1 Silicon carbide K1 Thermal resistance K1 Thermal engineering K1 Sintering K1 Switching loss K1 Current density K1 SmartCutTM K1 SmartSiCTM K1 Low resistivity K1 SiC layer transfer K1 Power Cycling SP 210 OP 214 LK http://dx.doi.org/https://doi.org/10.1109/APEC48139.2024.10509052 DO https://doi.org/10.1109/APEC48139.2024.10509052 SF ELIB - SuUB Bremen
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