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1 Ergebnisse
1
Deep Investigation on SiC MOSFET Degradation under Gate Swi..:
, In:
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
,
Gomez, Alexis A.
;
Garcia-Mere, Juan R.
;
Rodriguez, Alberto
... - p. 1067-1072 , 2024
Link:
https://doi.org/10.1109/APEC48139.2024.10509140
RT T1 <cTitle>2024 IEEE Applied Power Electronics Conference and Exposition (APEC)</cTitle>: T1 <Title>Deep Investigation on SiC MOSFET Degradation under Gate Switching Stress and Application Switching Stress</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10509140&Exemplar=1&LAN=DE A1 Gomez, Alexis A. A1 Garcia-Mere, Juan R. A1 Rodriguez, Alberto A1 Rodriguez, Juan A1 Jimenez, Carlos A1 Roig-Guitart, Jaume YR 2024 SN 2470-6647 K1 Degradation K1 MOSFET K1 Silicon carbide K1 Switches K1 Logic gates K1 Threshold voltage K1 Topology K1 Reliability K1 Silicon Carbide (SiC) K1 Application switching stress K1 Gate switching stress K1 AC Bias Temperature Instability (AC BTI) K1 Dynamic Gate Stress K1 Dynamic Reverse Bias SP 1067 OP 1072 LK http://dx.doi.org/https://doi.org/10.1109/APEC48139.2024.10509140 DO https://doi.org/10.1109/APEC48139.2024.10509140 SF ELIB - SuUB Bremen
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