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1
A Gate Driver with a Low-Voltage GaN HEMT for False Turn-on..:
, In:
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
,
Shu, Ji
;
Sun, Jiahui
;
Zheng, Zheyang
. - p. 724-728 , 2024
Link:
https://doi.org/10.1109/APEC48139.2024.10509259
RT T1 <cTitle>2024 IEEE Applied Power Electronics Conference and Exposition (APEC)</cTitle>: T1 <Title>A Gate Driver with a Low-Voltage GaN HEMT for False Turn-on Suppression and Gate Reliability Enhancement of SiC MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10509259&Exemplar=1&LAN=DE A1 Shu, Ji A1 Sun, Jiahui A1 Zheng, Zheyang A1 Chen, Kevin J. YR 2024 SN 2470-6647 K1 MOSFET K1 Low voltage K1 Silicon carbide K1 Switching loss K1 Voltage K1 Logic gates K1 HEMTs K1 SiC MOSFET K1 GaN HEMT K1 Gate driver K1 False turn-on K1 Gate reliability SP 724 OP 728 LK http://dx.doi.org/https://doi.org/10.1109/APEC48139.2024.10509259 DO https://doi.org/10.1109/APEC48139.2024.10509259 SF ELIB - SuUB Bremen
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