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1 Ergebnisse
1
Optimal Driving Strategies for GaN HEMT: A Numerical Non-Li..:
, In:
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
,
Linares, Daniel Rios
;
Astudillo Martinez, Miguel
;
Vasic, Miroslav
- p. 2629-2636 , 2024
Link:
https://doi.org/10.1109/APEC48139.2024.10509318
RT T1 <cTitle>2024 IEEE Applied Power Electronics Conference and Exposition (APEC)</cTitle>: T1 <Title>Optimal Driving Strategies for GaN HEMT: A Numerical Non-Linear Datasheet-Based Model</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10509318&Exemplar=1&LAN=DE A1 Linares, Daniel Rios A1 Astudillo Martinez, Miguel A1 Vasic, Miroslav YR 2024 SN 2470-6647 K1 Photonic band gap K1 Layout K1 Switches K1 Zero voltage switching K1 Capacitance K1 Power electronics K1 Numerical models K1 Switching transient K1 power losses K1 parasitic capacitance K1 parasitic inductance K1 analytical model K1 Wide bandgap (WBG) K1 Gallium Nitride (GaN) K1 PCB layout SP 2629 OP 2636 LK http://dx.doi.org/https://doi.org/10.1109/APEC48139.2024.10509318 DO https://doi.org/10.1109/APEC48139.2024.10509318 SF ELIB - SuUB Bremen
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