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1 Ergebnisse
1
Aging Modeling and Simulation of the Gate Switching Instabi..:
, In:
2024 IEEE Applied Power Electronics Conference and Exposition (APEC)
,
Garcia-Mere, Juan R.
;
Gomez, Alexis A.
;
Roig-Guitart, Jaume
.. - p. 653-658 , 2024
Link:
https://doi.org/10.1109/APEC48139.2024.10509430
RT T1 <cTitle>2024 IEEE Applied Power Electronics Conference and Exposition (APEC)</cTitle>: T1 <Title>Aging Modeling and Simulation of the Gate Switching Instability Degradation in SiC MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10509430&Exemplar=1&LAN=DE A1 Garcia-Mere, Juan R. A1 Gomez, Alexis A. A1 Roig-Guitart, Jaume A1 Rodriguez, Juan A1 Rodriguez, Alberto YR 2024 SN 2470-6647 K1 Degradation K1 MOSFET K1 Adaptation models K1 Silicon carbide K1 Computational modeling K1 Switches K1 Logic gates K1 reliability K1 device modeling K1 Silicon Carbide (SiC) K1 Gate Switching Instability (GSI) K1 MOSFETs K1 threshold voltage SP 653 OP 658 LK http://dx.doi.org/https://doi.org/10.1109/APEC48139.2024.10509430 DO https://doi.org/10.1109/APEC48139.2024.10509430 SF ELIB - SuUB Bremen
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