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1 Ergebnisse
1
DC and RF Characteristics Study of III-Nitride β-Ga2O3 Nano..:
, In:
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Rao, G. Purnachandra
;
Lenka, Trupti Ranjan
;
Das, Samadrita
. - p. 1-3 , 2024
Link:
https://doi.org/10.1109/EDTM58488.2024.10511356
RT T1 <cTitle>2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>DC and RF Characteristics Study of III-Nitride β-Ga2O3 Nano-HEMT with the variation of Relative Gate Positions</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10511356&Exemplar=1&LAN=DE A1 Rao, G. Purnachandra A1 Lenka, Trupti Ranjan A1 Das, Samadrita A1 Nguyen, Hieu Pham Trung YR 2024 K1 Radio frequency K1 Performance evaluation K1 Noise K1 Semiconductor device reliability K1 Logic gates K1 HEMTs K1 Nanoscale devices K1 2DEG K1 Gate position K1 III-nitride K1 β-Ga2O3 K1 HEMT SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM58488.2024.10511356 DO https://doi.org/10.1109/EDTM58488.2024.10511356 SF ELIB - SuUB Bremen
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