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1 Ergebnisse
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Forksheet Field-Effect Transistors for Area Scaling and Gat..:
, In:
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Mertens, H.
;
Horiguchi, N.
- p. 1-3 , 2024
Link:
https://doi.org/10.1109/EDTM58488.2024.10511640
RT T1 <cTitle>2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>Forksheet Field-Effect Transistors for Area Scaling and Gate-Drain Capacitance Reduction in Nanosheet-based CMOS Technologies</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10511640&Exemplar=1&LAN=DE A1 Mertens, H. A1 Horiguchi, N. YR 2024 K1 Scalability K1 Field effect transistors K1 Metals K1 Logic gates K1 Capacitance K1 Nanoscale devices K1 Silicon SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM58488.2024.10511640 DO https://doi.org/10.1109/EDTM58488.2024.10511640 SF ELIB - SuUB Bremen
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