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1
Impact of Gate Insulator Process on NBTI in FinFETs and Res..:
, In:
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Bisht, Arnav Shaurya
;
Chatterjee, Payel
;
Mahapatra, Souvik
- p. 1-3 , 2024
Link:
https://doi.org/10.1109/EDTM58488.2024.10511944
RT T1 <cTitle>2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>Impact of Gate Insulator Process on NBTI in FinFETs and Resulting Ring Oscillator Degradation Under Normal and Overclocking Usage Conditions</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10511944&Exemplar=1&LAN=DE A1 Bisht, Arnav Shaurya A1 Chatterjee, Payel A1 Mahapatra, Souvik YR 2024 K1 Negative bias temperature instability K1 Ring oscillators K1 Degradation K1 Thermal variables control K1 Logic gates K1 FinFETs K1 Frequency estimation K1 NBTI K1 RMG K1 FinFET K1 BAT K1 CARAT K1 RO SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM58488.2024.10511944 DO https://doi.org/10.1109/EDTM58488.2024.10511944 SF ELIB - SuUB Bremen
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