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1 Ergebnisse
1
NiO/Ni2O3 based top gated junctionless field effect device ..:
, In:
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Mishra, Shreyansh
;
Mahalik, Sukanya
;
Sengupta, Apabrita
... - p. 1-3 , 2024
Link:
https://doi.org/10.1109/EDTM58488.2024.10512090
RT T1 <cTitle>2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>NiO/Ni2O3 based top gated junctionless field effect device for selective Cr(VI) ion detection in water</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10512090&Exemplar=1&LAN=DE A1 Mishra, Shreyansh A1 Mahalik, Sukanya A1 Sengupta, Apabrita A1 Eshore, Abhijit Narayan A1 Guha, Prasanta Kumar A1 Dey, Sayan YR 2024 K1 Temperature sensors K1 Performance evaluation K1 Metals K1 Voltage K1 Logic gates K1 Signal processing K1 Ions K1 Cr(VI) ion sensor K1 Ni2O3 dielectric K1 three terminal sensor K1 room temperature synthesis K1 top gate SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM58488.2024.10512090 DO https://doi.org/10.1109/EDTM58488.2024.10512090 SF ELIB - SuUB Bremen
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