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1 Ergebnisse
1
Investigation of DC Characteristics in GaN-on-Si power MIS-..:
, In:
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Johari, Anant
;
Tsai, Meng-Che
;
Thang, Trinh Ngo Minh
... - p. 1-3 , 2024
Link:
https://doi.org/10.1109/EDTM58488.2024.10512205
RT T1 <cTitle>2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>Investigation of DC Characteristics in GaN-on-Si power MIS-HEMTs over a Wide Temperature Range (4 K to 550 K) for Space and Quantum Computing Applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10512205&Exemplar=1&LAN=DE A1 Johari, Anant A1 Tsai, Meng-Che A1 Thang, Trinh Ngo Minh A1 Yang, Yi A1 Wu, Tian-Li A1 Gupta, Ankur A1 Singh, Rajendra YR 2024 K1 Resistance K1 Temperature distribution K1 Quantum computing K1 Scattering K1 Threshold voltage K1 Surface roughness K1 Space exploration K1 GaN-on-Si K1 MIS-HEMT K1 cryogenic temperature K1 quantum computing K1 space applications SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM58488.2024.10512205 DO https://doi.org/10.1109/EDTM58488.2024.10512205 SF ELIB - SuUB Bremen
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