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1 Ergebnisse
1
Fermi-Level Pinning Effect in Gate Region: A Case Study of ..:
, In:
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Hossain, Toiyob
;
Sikder, Bejoy
;
Azad, Md. Tasnim
... - p. 1-3 , 2024
Link:
https://doi.org/10.1109/EDTM58488.2024.10512349
RT T1 <cTitle>2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>Fermi-Level Pinning Effect in Gate Region: A Case Study of Multimetal Gated AlGaN/GaN HEMT for High RF Linearity</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10512349&Exemplar=1&LAN=DE A1 Hossain, Toiyob A1 Sikder, Bejoy A1 Azad, Md. Tasnim A1 Xie, Qingyun A1 Yuan, Mengyang A1 Yagyu, Eiji A1 Teo, Koon Hoo A1 Palacios, Tomas A1 Chowdhury, Nadim YR 2024 K1 Radio frequency K1 Fermi level K1 Linearity K1 Computer architecture K1 HEMTs K1 Logic gates K1 Wide band gap semiconductors K1 AlGaN/GaN HEMT K1 Fermi-Level Pinning K1 Multimetal Gate SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM58488.2024.10512349 DO https://doi.org/10.1109/EDTM58488.2024.10512349 SF ELIB - SuUB Bremen
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