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1 Ergebnisse
1
Test Structures of Cross-Domain Interface Circuits with Dee..:
, In:
2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS)
,
Huang, Huai-Min
;
Ker, Ming-Dou
- p. 1-6 , 2024
Link:
https://doi.org/10.1109/ICMTS59902.2024.10520690
RT T1 <cTitle>2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS)</cTitle>: T1 <Title>Test Structures of Cross-Domain Interface Circuits with Deep N-Well Layout to Improve CDM ESD Robustness</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10520690&Exemplar=1&LAN=DE A1 Huang, Huai-Min A1 Ker, Ming-Dou YR 2024 SN 2158-1029 K1 Semiconductor device modeling K1 Power demand K1 Noise K1 Logic gates K1 Electrostatic discharges K1 CMOS technology K1 Robustness K1 Charged-device model (CDM) K1 electrostatic discharge (ESD) K1 cross-domain interface circuits K1 separated power domains K1 gate oxide rupture SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/ICMTS59902.2024.10520690 DO https://doi.org/10.1109/ICMTS59902.2024.10520690 SF ELIB - SuUB Bremen
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