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1 Ergebnisse
1
A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide ..:
, In:
2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS)
,
Huang, Huai-Lin
;
Hsuesh, Li-Tien
;
Tu, Yen-Cheng
. - p. 1-5 , 2024
Link:
https://doi.org/10.1109/ICMTS59902.2024.10520701
RT T1 <cTitle>2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS)</cTitle>: T1 <Title>A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide Characteristics Measurement</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10520701&Exemplar=1&LAN=DE A1 Huang, Huai-Lin A1 Hsuesh, Li-Tien A1 Tu, Yen-Cheng A1 Tsui, Bing-Yue YR 2024 SN 2158-1029 K1 Annealing K1 Density measurement K1 Capacitance-voltage characteristics K1 MOS capacitors K1 Logic gates K1 Etching K1 Microelectronics SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/ICMTS59902.2024.10520701 DO https://doi.org/10.1109/ICMTS59902.2024.10520701 SF ELIB - SuUB Bremen
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