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1 Ergebnisse
1
Charge Trapping in SiC MOSFETs under Constant Gate Current ..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Marcuzzi, A.
;
Avramenko, M.
;
De Santi, C.
... - p. 1-5 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529310
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529310&Exemplar=1&LAN=DE A1 Marcuzzi, A. A1 Avramenko, M. A1 De Santi, C. A1 Moens, P. A1 Geenen, F. A1 Meneghesso, G. A1 Zanoni, E. A1 Meneghini, M. YR 2024 SN 1938-1891 K1 Electron traps K1 Charge pumps K1 Voltage measurement K1 Silicon carbide K1 Current measurement K1 Logic gates K1 Threshold voltage K1 Charge carrier processes K1 MOSFET K1 Leakage currents SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529310 DO https://doi.org/10.1109/IRPS48228.2024.10529310 SF ELIB - SuUB Bremen
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