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1 Ergebnisse
1
Fundamental understanding of NBTI degradation mechanism in ..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Zhao, Ying
;
Rinaudo, Pietro
;
Chasin, Adrian
... - p. 1-7 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529352
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Fundamental understanding of NBTI degradation mechanism in IGZO channel devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529352&Exemplar=1&LAN=DE A1 Zhao, Ying A1 Rinaudo, Pietro A1 Chasin, Adrian A1 Truijen, Brecht A1 Kaczer, Ben A1 Rassoul, Nouredine A1 Dekkers, Harold A1 Belmonte, Attilio A1 De Wolf, Ingrid A1 Kar, Gouri A1 Franco, Jacopo YR 2024 SN 1938-1891 K1 Negative bias temperature instability K1 Temperature dependence K1 Thermal variables control K1 Hydrogen K1 Logic gates K1 Threshold voltage K1 Semiconductor process modeling K1 IGZO K1 NBTI K1 negative shift K1 oxide-field-driven hydrogen release SP 1 OP 7 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529352 DO https://doi.org/10.1109/IRPS48228.2024.10529352 SF ELIB - SuUB Bremen
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