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1 Ergebnisse
1
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs ..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Avramenko, M.
;
De Schepper, L.
;
Cano, J.-F.
... - p. P54.SiC-1-P54.SiC-4 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529358
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529358&Exemplar=1&LAN=DE A1 Avramenko, M. A1 De Schepper, L. A1 Cano, J.-F. A1 Geenen, F. A1 Moens, P. A1 Marcuzzi, A. A1 De Santi, C. A1 Meneghini, M. YR 2024 SN 1938-1891 K1 Semiconductor device modeling K1 Temperature distribution K1 MOSFET K1 Breakdown voltage K1 Solid modeling K1 Silicon carbide K1 Threshold voltage K1 threshold voltage instability K1 trench MOSFET K1 time-dependent dielectric breakdown K1 constant voltage stress K1 recovery SP P54.SiC OP 1-P54.SiC-4 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529358 DO https://doi.org/10.1109/IRPS48228.2024.10529358 SF ELIB - SuUB Bremen
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