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1
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
O'Sullivan, B. J.
;
Alian, A.
;
Sibaja-Hernandez, A.
... - p. 1-9 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529379
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529379&Exemplar=1&LAN=DE A1 O'Sullivan, B. J. A1 Alian, A. A1 Sibaja-Hernandez, A. A1 Franco, J. A1 Yadav, S. A1 Yu, H. A1 Rathi, A. A1 Peralagu, U. A1 Chasin, A. A1 Parvais, B. A1 Collaert, N. YR 2024 SN 1938-1891 K1 Radio frequency K1 Power amplifiers K1 HEMTs K1 Hafnium compounds K1 Dielectrics K1 Wide band gap semiconductors K1 Reliability K1 GaN-on-Si K1 MOS-HEMT K1 defect K1 capture K1 emission SP 1 OP 9 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529379 DO https://doi.org/10.1109/IRPS48228.2024.10529379 SF ELIB - SuUB Bremen
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