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1 Ergebnisse
1
Exploring the border traps near the SiO2-SiC interface usin..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Kumar, P.
;
Krummenacher, M.
;
Medeiros, H. G.
... - p. 1-6 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529387
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Exploring the border traps near the SiO2-SiC interface using conductance measurements</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529387&Exemplar=1&LAN=DE A1 Kumar, P. A1 Krummenacher, M. A1 Medeiros, H. G. A1 Race, S. A1 Natzke, P. A1 Kovacevic-Badstubner, I. A1 Bathen, M.E. A1 Grossner, U. YR 2024 SN 1938-1891 K1 Temperature measurement K1 Performance evaluation K1 Semiconductor device measurement K1 Annealing K1 Temperature K1 Silicon carbide K1 Threshold voltage K1 MOS capacitor K1 border traps K1 conductance measurement K1 interface traps SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529387 DO https://doi.org/10.1109/IRPS48228.2024.10529387 SF ELIB - SuUB Bremen
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