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1 Ergebnisse
1
Device Design and Reliability of GAA MBCFET:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Kang, M.
;
Chang, M.
;
Park, Y.
... - p. 1-6 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529401
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Device Design and Reliability of GAA MBCFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529401&Exemplar=1&LAN=DE A1 Kang, M. A1 Chang, M. A1 Park, Y. A1 Noh, C. A1 Hong, S. H. A1 Park, B. A1 Park, Y. H A1 Jung, Y.C A1 Lim, W.S. A1 Kim, G.H. A1 Lee, Y. A1 Yang, H. A1 Shin, D. A1 Yang, J. G. A1 Cho, K. H. A1 Jeong, W. C. A1 Cho, H.-J A1 Kwon, W. H. A1 Kim, D.W. A1 Rim, K. A1 Song, J. H. YR 2024 SN 1938-1891 K1 Performance evaluation K1 Gallium arsenide K1 Field effect transistors K1 Logic gates K1 Reliability engineering K1 FinFETs K1 Nanoscale devices K1 MBCFETs K1 GAA K1 Nanosheet FETs SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529401 DO https://doi.org/10.1109/IRPS48228.2024.10529401 SF ELIB - SuUB Bremen
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