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1 Ergebnisse
1
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation ..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Boito, M.
;
Fregolent, M.
;
De Santi, C.
... - p. 1-5 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529407
RT T1
2024 IEEE International Reliability Physics Symposium (IRPS)
: T1
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach
UL https://suche.suub.uni-bremen.de/peid=ieee-10529407&Exemplar=1&LAN=DE A1 Boito, M. A1 Fregolent, M. A1 De Santi, C. A1 Abbisogni, A. A1 Smerzi, S. A1 Rossetto, I. A1 Iucolano, F. A1 Meneghesso, G. A1 Zanoni, E. A1 Meneghini, M. YR 2024 SN 1938-1891 K1 Degradation K1 Semiconductor device reliability K1 Switches K1 HEMTs K1 Transistors K1 MODFETs K1 Stress K1 Dynamic on-resistance K1 GaN HEMT K1 Hard switching SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529407 DO https://doi.org/10.1109/IRPS48228.2024.10529407 SF ELIB - SuUB Bremen
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