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1 Ergebnisse
1
Sub-20-nm DRAM Technology under Negative Bias Temperature I..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Wang, Da
;
Xue, Yongkang
;
Liu, Yong
... - p. 9B.2-1-9B.2-7 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529451
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529451&Exemplar=1&LAN=DE A1 Wang, Da A1 Xue, Yongkang A1 Liu, Yong A1 Ren, Pengpeng A1 Sun, Zixuan A1 Wang, Zirui A1 Liu, Yueyang A1 Cheng, Zhijun A1 Yang, Haiyang A1 Liu, Xiangli A1 Wu, Blacksmith A1 Cao, Kanyu A1 Wang, Runsheng A1 Ji, Zhigang A1 Huang, Ru YR 2024 SN 1938-1891 K1 Negative bias temperature instability K1 Electron traps K1 Charge pumps K1 Thermal variables control K1 Random access memory K1 Reliability theory K1 Nitrogen K1 DRAM K1 Reliability K1 Ultra-fast electron traps SP 9B.2 OP 1-9B.2-7 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529451 DO https://doi.org/10.1109/IRPS48228.2024.10529451 SF ELIB - SuUB Bremen
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