I agree that this site is using cookies. You can find further informations
here
.
X
Login
Merkliste (
0
)
Home
About us
Home About us
Our history
Profile
Press & public relations
Friends
The library in figures
Exhibitions
Projects
Training, internships, careers
Films
Services & Information
Home Services & Information
Lending and interlibrary loans
Returns and renewals
Training and library tours
My Account
Library cards
New to the library?
Download Information
Opening hours
Learning spaces
PC, WLAN, copy, scan and print
Catalogs and collections
Home Catalogs and Collections
Rare books and manuscripts
Digital collections
Subject Areas
Our sites
Home Our sites
Central Library
Law Library (Juridicum)
BB Business and Economics (BB11)
BB Physics and Electrical Engineering
TB Engineering and Social Sciences
TB Economics and Nautical Sciences
TB Music
TB Art & Design
TB Bremerhaven
Contact the library
Home Contact the library
Staff Directory
Open access & publishing
Home Open access & publishing
Reference management: Citavi & RefWorks
Publishing documents
Open Access in Bremen
zur Desktop-Version
Toggle navigation
Merkliste
1 Ergebnisse
1
Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Steinmann, Philipp
;
Lichtenwalner, Daniel J.
;
Stein, Shane
... - p. P58.SiC-1-P58.SiC-4 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529457
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529457&Exemplar=1&LAN=DE A1 Steinmann, Philipp A1 Lichtenwalner, Daniel J. A1 Stein, Shane A1 Park, Jae-Hyung A1 Das, Suman A1 Ryu, Sei-Hyung YR 2024 SN 1938-1891 K1 Temperature sensors K1 Temperature measurement K1 Voltage measurement K1 Density measurement K1 Thermal variables control K1 Threshold voltage K1 Reliability K1 Bias temperature instability stress K1 Interface trap density K1 Power MOSFET K1 Subthreshold slope SP P58.SiC OP 1-P58.SiC-4 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529457 DO https://doi.org/10.1109/IRPS48228.2024.10529457 SF ELIB - SuUB Bremen
Export
RefWorks (nur Desktop-Version!)
Flow
(Zuerst in
Flow
einloggen, dann importieren)
