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1 Ergebnisse
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Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Steinmann, Philipp
;
Lichtenwalner, Daniel J.
;
Stein, Shane
... - p. P58.SiC-1-P58.SiC-4 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529457
RT T1
2024 IEEE International Reliability Physics Symposium (IRPS)
: T1
Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method
UL https://suche.suub.uni-bremen.de/peid=ieee-10529457&Exemplar=1&LAN=DE A1 Steinmann, Philipp A1 Lichtenwalner, Daniel J. A1 Stein, Shane A1 Park, Jae-Hyung A1 Das, Suman A1 Ryu, Sei-Hyung YR 2024 SN 1938-1891 K1 Temperature sensors K1 Temperature measurement K1 Voltage measurement K1 Density measurement K1 Thermal variables control K1 Threshold voltage K1 Reliability K1 Bias temperature instability stress K1 Interface trap density K1 Power MOSFET K1 Subthreshold slope SP P58.SiC OP 1-P58.SiC-4 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529457 DO https://doi.org/10.1109/IRPS48228.2024.10529457 SF ELIB - SuUB Bremen
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