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1 Ergebnisse
1
Surface Charge Migration in SiC Power MOSFETs Induced by HV..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Rummel, B.D.
;
Glaser, C.E.
;
Gurule, R.T.
... - p. P52.RT-1-P52.RT-6 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529461
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Surface Charge Migration in SiC Power MOSFETs Induced by HVDC-H3TRB Testing</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529461&Exemplar=1&LAN=DE A1 Rummel, B.D. A1 Glaser, C.E. A1 Gurule, R.T. A1 Groves, M. A1 Binder, A.T. A1 Floyd, R. A1 Yates, L. A1 Reilly, K.J. A1 Kaplar, R.J. YR 2024 SN 1938-1891 K1 Degradation K1 Scanning electron microscopy K1 MOSFET K1 Silicon carbide K1 Moisture K1 Logic gates K1 Robustness K1 Failure Mechanisms K1 Humidity Effects K1 Leakage Currents K1 Power Electronics K1 Wide Band Gap Semiconductors SP P52.RT OP 1-P52.RT-6 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529461 DO https://doi.org/10.1109/IRPS48228.2024.10529461 SF ELIB - SuUB Bremen
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