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1 Ergebnisse
1
A Recombination-Enhanced-Defect-Reaction-Based Model for th..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Grasser, T.
;
Feil, M.
;
Waschneck, K.
... - p. 3B.1-1-3B.1-7 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529465
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529465&Exemplar=1&LAN=DE A1 Grasser, T. A1 Feil, M. A1 Waschneck, K. A1 Reisinger, H. A1 Berens, J. A1 Waldhoer, D. A1 Vasilev, A. A1 Waltl, M. A1 Aichinger, T. A1 Bockstedte, M. A1 Gustin, W. A1 Pobegen, G. YR 2024 SN 1938-1891 K1 Semiconductor device modeling K1 Degradation K1 MOSFET K1 Charge pumps K1 Analytical models K1 Silicon carbide K1 Switches SP 3B.1 OP 1-3B.1-7 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529465 DO https://doi.org/10.1109/IRPS48228.2024.10529465 SF ELIB - SuUB Bremen
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