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1 Ergebnisse
1
Role of Gate Hole Injection in Minimizing Substrate Couplin..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Cavaliere, A.
;
De Santi, C.
;
Meneghesso, G.
.. - p. P17.GaN-1-P17.GaN-4 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529477
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529477&Exemplar=1&LAN=DE A1 Cavaliere, A. A1 De Santi, C. A1 Meneghesso, G. A1 Zanoni, E. A1 Meneghini, M. YR 2024 SN 1938-1891 K1 Couplings K1 Switching frequency K1 HEMTs K1 Logic gates K1 Wide band gap semiconductors K1 MODFETs K1 Carbon K1 pGaN gate K1 hole injection K1 carbon doped buffer K1 substrate bias K1 hole trapping SP P17.GaN OP 1-P17.GaN-4 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529477 DO https://doi.org/10.1109/IRPS48228.2024.10529477 SF ELIB - SuUB Bremen
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