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1 Ergebnisse
1
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobil..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Saro, Marco
;
de Pieri, Francesco
;
Carlotto, Andrea
... - p. 5B.2-1-5B.2-8 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529479
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529479&Exemplar=1&LAN=DE A1 Saro, Marco A1 de Pieri, Francesco A1 Carlotto, Andrea A1 Fornasier, Mirko A1 Rampazzo, Fabiana A1 De Santi, Carlo A1 Meneghesso, Gaudenzio A1 Meneghini, Matteo A1 Zanoni, Enrico A1 Bisi, Davide A1 Guidry, Matthew A1 Keller, Stacia A1 Mishra, Umesh YR 2024 SN 1938-1891 K1 Pulse measurements K1 HEMTs K1 Logic gates K1 Stability analysis K1 Wide band gap semiconductors K1 Ohmic contacts K1 Transient analysis K1 Current collapse K1 Deep levels K1 HEMT K1 N-Polar-GaN K1 Reliability SP 5B.2 OP 1-5B.2-8 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529479 DO https://doi.org/10.1109/IRPS48228.2024.10529479 SF ELIB - SuUB Bremen
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