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1 Ergebnisse
1
HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Fie..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Lin, Y.S.
;
Yang, Cheng Hsun
;
Wang, C.H.
... - p. 2C.4-1-2C.4-6 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529485
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power Applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529485&Exemplar=1&LAN=DE A1 Lin, Y.S. A1 Yang, Cheng Hsun A1 Wang, C.H. A1 Sou, K.P. A1 Yang, Cheng Hong A1 Shih, M.C. A1 Hung, W.S. A1 Chuang, W. H. A1 Ciou, F.M. A1 Chiu, P. C. A1 Hsu, C.C. A1 Chen, C.F. A1 Kuo, D.M. YR 2024 SN 1938-1891 K1 Performance evaluation K1 Buffer layers K1 Correlation K1 Impurities K1 Capacitance-voltage characteristics K1 Logic gates K1 HEMTs K1 Power Device K1 Reliability K1 HTRB K1 HV-CV K1 Field Plate SP 2C.4 OP 1-2C.4-6 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529485 DO https://doi.org/10.1109/IRPS48228.2024.10529485 SF ELIB - SuUB Bremen
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