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A Comprehensive Study of Read-After-Write-Delay for Ferroel..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

Myeong, Ilho ; Lim, Suhwan ; Kim, Taeyoung... - p. 9B.3-1-9B.3-6 , 2024

Link: https://doi.org/10.1109/IRPS48228.2024.10529486

RT 
T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-10529486&Exemplar=1&LAN=DE
				
A1 Myeong, Ilho
A1 Lim, Suhwan
A1 Kim, Taeyoung
A1 Park, Sanghyun
A1 Noh, Suseong
A1 Lee, Seung Min
A1 Woo, Jongho
A1 Ko, Hanseung
A1 Noh, Youngji
A1 Choi, Munkang
A1 Lee, Kiheun
A1 Han, Sangwoo
A1 Baek, Jongyeon
A1 Kim, Kijoon
A1 Jung, Dongjin
A1 Kim, Jisung
A1 Park, Jaewoo
A1 Kim, Seunghyun
A1 Kim, Hyoseok
A1 Yoon, Ilyounz
A1 Kim, Jaeho
A1 Kim, Kwangsoo
A1 Park, Kwangmin
A1 Kuh, Bong Jin
A1 Kim, Wanki
A1 Ha, Daewon
A1 Ahn, Sujin
A1 Song, Jaihyuk
A1 Yoo, Sijung
A1 Lee, Hyun Jae
A1 Choe, Duk-Hyun
A1 Nam, Seung-Geol
A1 Heo, Jinseong
YR 2024
SN 1938-1891
K1 Electron traps
K1 Low voltage
K1 Logic gates
K1 Threshold voltage
K1 Reliability
K1 Standards
K1 Physics
K1 Charge Trap
K1 Ferroelectrics
K1 FeFET
K1 Gate stack Polarization
K1 Retention
K1 RAWD
K1 Vertical NAND
SP 9B.3
OP 1-9B.3-6
LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529486
DO https://doi.org/10.1109/IRPS48228.2024.10529486
SF ELIB - SuUB Bremen

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