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1 Ergebnisse
1
Side and Corner Region Non-Uniformities in Grown SiO2 and T..:
, In:
2024 IEEE International Reliability Physics Symposium (IRPS)
,
Bastos, J. P.
;
O'Sullivan, B. J.
;
Higashi, Y.
... - p. P36.PI-1-P36.PI-7 , 2024
Link:
https://doi.org/10.1109/IRPS48228.2024.10529495
RT T1 <cTitle>2024 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10529495&Exemplar=1&LAN=DE A1 Bastos, J. P. A1 O'Sullivan, B. J. A1 Higashi, Y. A1 Chasin, A. A1 Franco, J. A1 Arimura, H. A1 Ganguly, J. A1 Capogreco, E. A1 Spessot, A. A1 Horiguchi, N. YR 2024 SN 1938-1891 K1 Silicon compounds K1 Three-dimensional displays K1 Electric breakdown K1 High-voltage techniques K1 Logic gates K1 Gate leakage K1 Object recognition K1 Dielectric breakdown K1 Gate leakage current K1 High-voltage transistors K1 NAND flash K1 Reliability SP P36.PI OP 1-P36.PI-7 LK http://dx.doi.org/https://doi.org/10.1109/IRPS48228.2024.10529495 DO https://doi.org/10.1109/IRPS48228.2024.10529495 SF ELIB - SuUB Bremen
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