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1 Ergebnisse
1
Improvement of Line Roughness of Fin by Conventional Therma..:
, In:
2024 Conference of Science and Technology for Integrated Circuits (CSTIC)
,
Wang, Peng
;
Sang, Guanqiao
;
Lu, Yihong
... - p. 1-3 , 2024
Link:
https://doi.org/10.1109/CSTIC61820.2024.10531941
RT T1
2024 Conference of Science and Technology for Integrated Circuits (CSTIC)
: T1
Improvement of Line Roughness of Fin by Conventional Thermal Oxidation and Atomic Level Low-Temperature Ozone Treatments
UL https://suche.suub.uni-bremen.de/peid=ieee-10531941&Exemplar=1&LAN=DE A1 Wang, Peng A1 Sang, Guanqiao A1 Lu, Yihong A1 Xiong, Wenjuan A1 Jiang, Renjie A1 Cao, Lei A1 Li, QingKun A1 Li, Lianlian A1 Yao, Jiaxin A1 Zhang, Yadong A1 Zhang, Meihe A1 Zhang, Qingzhu A1 Li, Junfeng A1 Yin, Huaxiang A1 Luo, Jun YR 2024 K1 Integrated circuits K1 Gases K1 Hafnium K1 DH-HEMTs K1 FinFETs K1 Oxidation K1 Surface roughness K1 conventional thermal oxidation (CTO) K1 low-temperature ozone (LTO) K1 line edge roughness (LER) K1 line width roughness (LWR) K1 cross-correlation coefficient (ρ) SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/CSTIC61820.2024.10531941 DO https://doi.org/10.1109/CSTIC61820.2024.10531941 SF ELIB - SuUB Bremen
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