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1
Optimized Electrothermal Drain Current Modeling of GaN-Base..:
, In:
2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT)
,
Rakib, Famin Rahman
;
Jarndal, Anwar
;
Alim, Mohammad Abdul
- p. 523-526 , 2024
Link:
https://doi.org/10.1109/ICEEICT62016.2024.10534393
RT T1 <cTitle>2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT)</cTitle>: T1 <Title>Optimized Electrothermal Drain Current Modeling of GaN-Based HEMT</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10534393&Exemplar=1&LAN=DE A1 Rakib, Famin Rahman A1 Jarndal, Anwar A1 Alim, Mohammad Abdul YR 2024 SN 2769-5700 K1 Semiconductor device modeling K1 HEMTs K1 Reliability engineering K1 Data models K1 Whale optimization algorithms K1 Circuit synthesis K1 Integrated circuit modeling K1 GaN HEMT K1 Metal Semiconductor Field Effect Transistor (MESFET) K1 Self-Heating Effect (SHE) K1 Empirical Model K1 Whale Optimization Algorithm (WOA) K1 Mean Square Error (MSE) SP 523 OP 526 LK http://dx.doi.org/https://doi.org/10.1109/ICEEICT62016.2024.10534393 DO https://doi.org/10.1109/ICEEICT62016.2024.10534393 SF ELIB - SuUB Bremen
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