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1
Temperature Response and Power Dissipation in GaN HEMT on D..:
, In:
2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT)
,
Jaman, Imdad Ahmed
;
Karim, Tofayel
;
Rahman, Md. Asifur
... - p. 533-537 , 2024
Link:
https://doi.org/10.1109/ICEEICT62016.2024.10534401
RT T1
2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT)
: T1
Temperature Response and Power Dissipation in GaN HEMT on Diamond Substrate
UL https://suche.suub.uni-bremen.de/peid=ieee-10534401&Exemplar=1&LAN=DE A1 Jaman, Imdad Ahmed A1 Karim, Tofayel A1 Rahman, Md. Asifur A1 Faruk Azad, Md. Omar A1 Jarndal, Anwar A1 Alim, Mohammad Abdul YR 2024 SN 2769-5700 K1 Temperature measurement K1 Thermal resistance K1 Diamonds K1 HEMTs K1 Thermal conductivity K1 Power dissipation K1 Electrical resistance measurement K1 Channel temperature K1 GaN HEMT K1 power dissipation K1 self-heating K1 thermal conductivity K1 thermal resistance SP 533 OP 537 LK http://dx.doi.org/https://doi.org/10.1109/ICEEICT62016.2024.10534401 DO https://doi.org/10.1109/ICEEICT62016.2024.10534401 SF ELIB - SuUB Bremen
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