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1 Ergebnisse
1
Investigation of Power-Down Leakage Bin Fallout Caused by F..:
, In:
2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
,
Tang, Jialiang
;
ISLAM, Mohd Nurul
;
Tan
. - p. 1-4 , 2024
Link:
https://doi.org/10.1109/ASMC61125.2024.10545531
RT T1 <cTitle>2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)</cTitle>: T1 <Title>Investigation of Power-Down Leakage Bin Fallout Caused by Fixed Location Gate Oxide Pin Hole</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10545531&Exemplar=1&LAN=DE A1 Tang, Jialiang A1 ISLAM, Mohd Nurul A1 Tan A1 Sean, Kiat YR 2024 SN 2376-6697 K1 Temperature distribution K1 Shape K1 Semiconductor devices K1 Logic gates K1 Semiconductor device manufacture K1 Silicon K1 Pins K1 Gate oxide Pin hole K1 STI K1 located high stress SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ASMC61125.2024.10545531 DO https://doi.org/10.1109/ASMC61125.2024.10545531 SF ELIB - SuUB Bremen
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