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The Study of Normally-on Power GaN HEMTs in QST Substrate w..:
, In:
2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
,
Chen, Pei-Tien
;
Chuang, Chia-Hao
;
Liu, An-Chen
. - p. 1-2 , 2024
Link:
https://doi.org/10.1109/VLSITSA60681.2024.10546378
RT T1
2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
: T1
The Study of Normally-on Power GaN HEMTs in QST Substrate with High Breakdown Voltage
UL https://suche.suub.uni-bremen.de/peid=ieee-10546378&Exemplar=1&LAN=DE A1 Chen, Pei-Tien A1 Chuang, Chia-Hao A1 Liu, An-Chen A1 Kuo, Hao-Chung YR 2024 K1 Performance evaluation K1 Buffer layers K1 Breakdown voltage K1 Voltage measurement K1 HEMTs K1 Very large scale integration K1 Silicon K1 GaN-on-QST K1 normally-on GaN HEMT K1 CTE SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSITSA60681.2024.10546378 DO https://doi.org/10.1109/VLSITSA60681.2024.10546378 SF ELIB - SuUB Bremen
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