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1 Ergebnisse
1
Study of Frequency Capability of 1.7kV SiC MOSFET with Curr..:
, In:
2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
,
Chen, Hua-Mao
;
Shen, Shih-Chiang
;
Yen, Chih-Hung
... - p. 1-2 , 2024
Link:
https://doi.org/10.1109/VLSITSA60681.2024.10546381
RT T1 <cTitle>2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)</cTitle>: T1 <Title>Study of Frequency Capability of 1.7kV SiC MOSFET with Current Spreading Layer</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10546381&Exemplar=1&LAN=DE A1 Chen, Hua-Mao A1 Shen, Shih-Chiang A1 Yen, Chih-Hung A1 Chen, Yu-Ting A1 Lail, Chih-Ming A1 Huang, Shin-Yi A1 Tsai, Chin-Ya YR 2024 K1 Resistance K1 MOSFET K1 Silicon carbide K1 Cutoff frequency K1 Switches K1 Very large scale integration K1 Logic gates K1 SiC K1 current spreading layer K1 switching frequency SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSITSA60681.2024.10546381 DO https://doi.org/10.1109/VLSITSA60681.2024.10546381 SF ELIB - SuUB Bremen
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