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1 Ergebnisse
1
Impact of In and Ga Fractions in Lattice-Matched InAlGaN Ba..:
, In:
2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
,
Langpoklakpam, Catherine
;
Hsiao, Yi-Kai
;
Lin, Chun-Hsiung
.. - p. 1-2 , 2024
Link:
https://doi.org/10.1109/VLSITSA60681.2024.10546393
RT T1 <cTitle>2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)</cTitle>: T1 <Title>Impact of In and Ga Fractions in Lattice-Matched InAlGaN Barrier Layer on Performance of InAlGaN/GaN MISHEMT</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10546393&Exemplar=1&LAN=DE A1 Langpoklakpam, Catherine A1 Hsiao, Yi-Kai A1 Lin, Chun-Hsiung A1 Chang, Edward Yi A1 Kuo, Hao-Chung YR 2024 K1 Performance evaluation K1 Carrier confinement K1 Photonic band gap K1 Lattices K1 HEMTs K1 Very large scale integration K1 Electric variables SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSITSA60681.2024.10546393 DO https://doi.org/10.1109/VLSITSA60681.2024.10546393 SF ELIB - SuUB Bremen
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