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Investigations of Performances in RF GaN MIS-HEMTs and T-ga..:
, In:
2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
,
Su, Chin-Ya
;
Tsai, Meng-Che
;
Johari, Anant
... - p. 1-2 , 2024
Link:
https://doi.org/10.1109/VLSITSA60681.2024.10546400
RT T1
2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
: T1
Investigations of Performances in RF GaN MIS-HEMTs and T-gate Schottky HEMTs with Leakage Current Analysis Using Emission Microscopy
UL https://suche.suub.uni-bremen.de/peid=ieee-10546400&Exemplar=1&LAN=DE A1 Su, Chin-Ya A1 Tsai, Meng-Che A1 Johari, Anant A1 Gupta, Ankur A1 Singh, Rajendra A1 Wu, Tian-Li YR 2024 K1 Radio frequency K1 Performance evaluation K1 Microscopy K1 HEMTs K1 Logic gates K1 Very large scale integration K1 Insulators SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSITSA60681.2024.10546400 DO https://doi.org/10.1109/VLSITSA60681.2024.10546400 SF ELIB - SuUB Bremen
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