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1 Ergebnisse
1
Study on Enhancing ESD Reliability Through A Area Modulatio..:
, In:
2024 10th International Conference on Applied System Innovation (ICASI)
,
Lin, Ting-En
;
Chen, Shen-Li
;
Yang, Xiu-Yuan
.. - p. 46-48 , 2024
Link:
https://doi.org/10.1109/ICASI60819.2024.10547948
RT T1 <cTitle>2024 10th International Conference on Applied System Innovation (ICASI)</cTitle>: T1 <Title>Study on Enhancing ESD Reliability Through A Area Modulation of High-Voltage nLDMOSs with the Drain Embedded STI</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10547948&Exemplar=1&LAN=DE A1 Lin, Ting-En A1 Chen, Shen-Li A1 Yang, Xiu-Yuan A1 Chen, Hung-Wei A1 Lee, Yi-Mu YR 2024 SN 2768-4156 K1 Q-factor K1 Temperature distribution K1 Technological innovation K1 Semiconductor device reliability K1 Modulation K1 High-voltage techniques K1 Electrostatic discharges K1 Electrostatic discharge K1 Holding voltage K1 Laterally-diffused metal-oxide semiconductor K1 Latch-up Eeffect (LU) K1 Shallow Trench Isolation (STI) SP 46 OP 48 LK http://dx.doi.org/https://doi.org/10.1109/ICASI60819.2024.10547948 DO https://doi.org/10.1109/ICASI60819.2024.10547948 SF ELIB - SuUB Bremen
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