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1 Ergebnisse
1
ESD/Latch-Up Reliability Enhancements of HV nLDMOSs by Drai..:
, In:
2024 10th International Conference on Applied System Innovation (ICASI)
,
Yang, Xiu-Yuan
;
Chen, Shen-Li
;
Lin, Ting-En
.. - p. 1-2 , 2024
Link:
https://doi.org/10.1109/ICASI60819.2024.10547995
RT T1 <cTitle>2024 10th International Conference on Applied System Innovation (ICASI)</cTitle>: T1 <Title>ESD/Latch-Up Reliability Enhancements of HV nLDMOSs by Drain-End Horizontally Embedding Different Discrete P+ SCRs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10547995&Exemplar=1&LAN=DE A1 Yang, Xiu-Yuan A1 Chen, Shen-Li A1 Lin, Ting-En A1 Chen, Hung-Wei A1 Lee, Yi-Mu YR 2024 SN 2768-4156 K1 Technological innovation K1 Design methodology K1 Rectifiers K1 Voltage K1 High-voltage techniques K1 Electrostatic discharges K1 Reliability engineering K1 Discrete P+ K1 ESD-Robustness K1 High-Voltage nLDMOS (HV-nLDMOS) K1 Latch-up effect (LU) K1 Silicon-controlled Rectifier (SCR) SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/ICASI60819.2024.10547995 DO https://doi.org/10.1109/ICASI60819.2024.10547995 SF ELIB - SuUB Bremen
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