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1 Ergebnisse
1
Design of Fully Integrated GaN Dual-Band Doherty Power Ampl..:
, In:
2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM)
,
Liu, Shuang
;
Gao, Ruibin
;
Dai, Zhijiang
... - p. 168-170 , 2024
Link:
https://doi.org/10.1109/GSMM61775.2024.10553139
RT T1 <cTitle>2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM)</cTitle>: T1 <Title>Design of Fully Integrated GaN Dual-Band Doherty Power Amplifier for 5G Wireless Communication</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10553139&Exemplar=1&LAN=DE A1 Liu, Shuang A1 Gao, Ruibin A1 Dai, Zhijiang A1 Shi, Weimin A1 Li, Mingyu A1 Pang, Jingzhou YR 2024 SN 2694-2968 K1 Wireless communication K1 Impedance matching K1 Simulation K1 Dual band K1 Power amplifiers K1 HEMTs K1 Transistors K1 Doherty Power amplifier (DPA) K1 dual-band K1 Gallium Nitride (GaN) K1 High Electron Mobility Transistor (HEMT) K1 fully integrated SP 168 OP 170 LK http://dx.doi.org/https://doi.org/10.1109/GSMM61775.2024.10553139 DO https://doi.org/10.1109/GSMM61775.2024.10553139 SF ELIB - SuUB Bremen
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