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1 Ergebnisse
1
Modeling I-MOS Capacitor C-V Characteristic for Non-Linear ..:
, In:
2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)
,
Giroletti, Simone
;
Shojaei, Fatemeh
;
Manghisoni, Massimo
.. - p. 1-4 , 2024
Link:
https://doi.org/10.1109/PRIME61930.2024.10559677
RT T1 <cTitle>2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)</cTitle>: T1 <Title>Modeling I-MOS Capacitor C-V Characteristic for Non-Linear Charge Sensitive Amplifiers</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10559677&Exemplar=1&LAN=DE A1 Giroletti, Simone A1 Shojaei, Fatemeh A1 Manghisoni, Massimo A1 Ratti, Lodovico A1 Vacchi, Carla YR 2024 K1 Semiconductor device modeling K1 Temperature sensors K1 Analytical models K1 Temperature distribution K1 Simulation K1 Capacitors K1 Predictive models K1 MOS Capacitor K1 Dynamic Signal Compression K1 Modeling K1 Charge Sensitive Amplifiers SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/PRIME61930.2024.10559677 DO https://doi.org/10.1109/PRIME61930.2024.10559677 SF ELIB - SuUB Bremen
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