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Analysis of the non-monotonic dependence of FOM of β-Ga2O3 ..:
, In:
2024 7th International Conference on Devices, Circuits and Systems (ICDCS)
,
Manukrishna, V R
;
Nikhil, K S
- p. 282-286 , 2024
Link:
https://doi.org/10.1109/ICDCS59278.2024.10560488
RT T1 <cTitle>2024 7th International Conference on Devices, Circuits and Systems (ICDCS)</cTitle>: T1 <Title>Analysis of the non-monotonic dependence of FOM of β-Ga2O3 based Junctionless Field Effect Transistor on doping profile linearity in the drift region</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10560488&Exemplar=1&LAN=DE A1 Manukrishna, V R A1 Nikhil, K S YR 2024 SN 2644-1802 K1 Performance evaluation K1 Circuits and systems K1 Field effect transistors K1 Linearity K1 Logic gates K1 Doping profiles K1 Impact ionization K1 drift doping profile K1 PFOM K1 β-Ga2O3 Field Effect Transistor K1 Tcad simulation K1 critical electric field SP 282 OP 286 LK http://dx.doi.org/https://doi.org/10.1109/ICDCS59278.2024.10560488 DO https://doi.org/10.1109/ICDCS59278.2024.10560488 SF ELIB - SuUB Bremen
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