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1 Ergebnisse
1
300 nm Pitch W2W HBI for CFET and 3D DRAM Through Module Co..:
, In:
2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
,
Sherwood, Tyler
;
Patlolla, Raghuveer
;
McIntyre, Dylan
... - p. 1968-1972 , 2024
Link:
https://doi.org/10.1109/ECTC51529.2024.00334
RT T1 <cTitle>2024 IEEE 74th Electronic Components and Technology Conference (ECTC)</cTitle>: T1 <Title>300 nm Pitch W2W HBI for CFET and 3D DRAM Through Module Co-optimization</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10564863&Exemplar=1&LAN=DE A1 Sherwood, Tyler A1 Patlolla, Raghuveer A1 McIntyre, Dylan A1 Sekine, Taketo A1 Sreenivasan, Raghav A1 Jeon, Yoocharn A1 Ley, Ryan A1 Probst, Gernot A1 Appell, Jason A1 Prakash, Amit A1 Gorchichko, Masha A1 Weis, Barbara YR 2024 SN 2377-5726 K1 Resistance K1 Performance evaluation K1 Technological innovation K1 Three-dimensional displays K1 Metallization K1 Stacking K1 Random access memory K1 W2W hybrid bonding K1 pitch scaling K1 3D packaging K1 CMP K1 300nm pitch K1 CFET K1 3D NAND K1 3D DRAM K1 Bond interface SP 1968 OP 1972 LK http://dx.doi.org/https://doi.org/10.1109/ECTC51529.2024.00334 DO https://doi.org/10.1109/ECTC51529.2024.00334 SF ELIB - SuUB Bremen
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