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1 Ergebnisse
1
High RF-high power dual capacitively coupled plasma charact..:
, In:
2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
,
Khan, Md Ishak
;
Hu, Xiyu
;
Wei, Wei
... - p. 2112-2116 , 2024
Link:
https://doi.org/10.1109/ECTC51529.2024.00360
RT T1 <cTitle>2024 IEEE 74th Electronic Components and Technology Conference (ECTC)</cTitle>: T1 <Title>High RF-high power dual capacitively coupled plasma characteristics dependency on process parameters: a finite element analysis approach</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10564940&Exemplar=1&LAN=DE A1 Khan, Md Ishak A1 Hu, Xiyu A1 Wei, Wei A1 Chen, Haobo A1 Haehn, Nicholas A1 Guo, Xiaoying A1 Arana, Leonel A1 Akazawa, Kensuke YR 2024 SN 2377-5726 K1 Semiconductor device modeling K1 Radio frequency K1 Analytical models K1 Plasma simulation K1 Simulation K1 Plasmas K1 Finite element analysis K1 plasma etch K1 capacitively coupled plasma K1 panel level packaging K1 finite element analysis SP 2112 OP 2116 LK http://dx.doi.org/https://doi.org/10.1109/ECTC51529.2024.00360 DO https://doi.org/10.1109/ECTC51529.2024.00360 SF ELIB - SuUB Bremen
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