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1 Ergebnisse
1
Low Temperature Wafer Level Hybrid Bonding Enabled by Advan..:
, In:
2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
,
Inoue, Fumihiro
;
Nagata, Atsushi
;
Fuse, Junya
... - p. 69-75 , 2024
Link:
https://doi.org/10.1109/ECTC51529.2024.00020
RT T1 <cTitle>2024 IEEE 74th Electronic Components and Technology Conference (ECTC)</cTitle>: T1 <Title>Low Temperature Wafer Level Hybrid Bonding Enabled by Advanced SiCN and Surface Activation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10565055&Exemplar=1&LAN=DE A1 Inoue, Fumihiro A1 Nagata, Atsushi A1 Fuse, Junya A1 Ebiko, Sodai A1 Sato, Ryosuke A1 Saito, Kenichi A1 Kondo, Yoshihiro A1 Kawauchi, Takuo A1 Park, Junghwan A1 Ahn, Chiwoo A1 Kim, Myeonghyeon A1 Kang, Jiho YR 2024 SN 2377-5726 K1 Temperature measurement K1 Wafer bonding K1 Silicon compounds K1 Planarization K1 Semiconductor device reliability K1 Plasmas K1 Bonding K1 Hybrid bonding K1 SiCN K1 Bond strength K1 Bonding mechanisms SP 69 OP 75 LK http://dx.doi.org/https://doi.org/10.1109/ECTC51529.2024.00020 DO https://doi.org/10.1109/ECTC51529.2024.00020 SF ELIB - SuUB Bremen
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