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1 Ergebnisse
1
Analysis and Suppression for Gate Oscillation Caused by Bod..:
, In:
2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
,
Zheng, Fujun.
;
Xu, He.
;
Gao, Hongyi.
... - p. 801-806 , 2024
Link:
https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567..
RT T1 <cTitle>2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)</cTitle>: T1 <Title>Analysis and Suppression for Gate Oscillation Caused by Body Diodes on Paralleled SiC MOSFETs Application</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10567188&Exemplar=1&LAN=DE A1 Zheng, Fujun. A1 Xu, He. A1 Gao, Hongyi. A1 Mei, Ying. A1 Zhu, Nan. A1 Xiang, Li. A1 Luo, Haoze. A1 Li, Wuhua. YR 2024 K1 Semiconductor device modeling K1 MOSFET K1 Analytical models K1 Silicon carbide K1 Layout K1 Logic gates K1 Power electronics K1 SiC MOSFET K1 Parallel-connection K1 Gate oscillation K1 Body diode SP 801 OP 806 LK http://dx.doi.org/https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567188 DO https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567188 SF ELIB - SuUB Bremen
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