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1 Ergebnisse
1
Electro-Thermal Coupling Characteristics and Modeling of Si..:
, In:
2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
,
Ma, Zaojun
;
Pei, Yunqing
;
Wang, Laili
... - p. 5037-5042 , 2024
Link:
https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567..
RT T1 <cTitle>2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)</cTitle>: T1 <Title>Electro-Thermal Coupling Characteristics and Modeling of SiC MOSFET Modules under High Pulse Current Conditions</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10567251&Exemplar=1&LAN=DE A1 Ma, Zaojun A1 Pei, Yunqing A1 Wang, Laili A1 Yang, Qingshou A1 Zhang, Tongyu A1 Wang, Haihua YR 2024 K1 Couplings K1 Semiconductor device modeling K1 Temperature measurement K1 MOSFET K1 Temperature distribution K1 Silicon carbide K1 Packaging K1 SiC MOSFET K1 electro-thermal coupling characteristics K1 model K1 pulse current SP 5037 OP 5042 LK http://dx.doi.org/https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567251 DO https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567251 SF ELIB - SuUB Bremen
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