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1 Ergebnisse
1
Active Gate Driving With Full 6-Bit Resolution for Differen..:
, In:
2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
,
Zhou, Haoxi
;
Inuma, Toshiaki
;
Zhang, Dibo
.. - p. 2242-2246 , 2024
Link:
https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567..
RT T1 <cTitle>2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)</cTitle>: T1 <Title>Active Gate Driving With Full 6-Bit Resolution for Different SiC MOSFETs Using Variable Gate Current Range Digital Gate Driver IC</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10567357&Exemplar=1&LAN=DE A1 Zhou, Haoxi A1 Inuma, Toshiaki A1 Zhang, Dibo A1 Hata, Katsuhiro A1 Takamiya, Makoto YR 2024 K1 Resistors K1 MOSFET K1 Technological innovation K1 Power measurement K1 Silicon carbide K1 Switches K1 Logic gates K1 Gate driver K1 switching loss K1 switching noise K1 SiC SP 2242 OP 2246 LK http://dx.doi.org/https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567357 DO https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567357 SF ELIB - SuUB Bremen
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