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1 Ergebnisse
1
Dynamic Reverse Bias Test Circuit for SiC MOSFET with Adjus..:
, In:
2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
,
Lu-Wei, Zuo
;
Hui, Meng
;
Ze, Zhou
... - p. 3688-3693 , 2024
Link:
https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567..
RT T1 <cTitle>2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)</cTitle>: T1 <Title>Dynamic Reverse Bias Test Circuit for SiC MOSFET with Adjustable dV ds/dt</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-10567430&Exemplar=1&LAN=DE A1 Lu-Wei, Zuo A1 Hui, Meng A1 Ze, Zhou A1 Bin, Yu A1 Haoze, Luo A1 Zhen, Xin YR 2024 K1 Degradation K1 MOSFET K1 Silicon carbide K1 High-voltage techniques K1 Switches K1 Logic gates K1 Rendering (computer graphics) K1 Adjustable dVds/dt K1 Dynamic reverse bias K1 SiC MOSFET SP 3688 OP 3693 LK http://dx.doi.org/https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567430 DO https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567430 SF ELIB - SuUB Bremen
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